5th International Workshop on Crystal Growth Technology
June 26 - 30, 2011 Berlin, Germany
We wish to thank the following for their contribution to the success of this conference: European Office of Aerospace Research and Development, Air Force Office of Scientific Research, United States Air Force Research Laboratory (www.london.af.mil).
Call for Posters
All participants of the workshop are invited to present their recent research results concerning crystal growth technology as posters.
Please, upload for each poster you intend to present an extended 2-pages abstract as a Word file or archive file until February 20, 2011.
Based on the submitted abstracts the program committee will decide about acceptance and will send a notification to the author until March 18, 2011.
The authors of the best abstracts will receive an invitation to submit a 4-pages article to the Journal of Crystal Growth. It is planned to edit a special issue of Journal of Crystal Growth with these articles.
All abstracts will be printed in an abstract book and will be delivered at the registration for the workshop.
The 2-page abstract should formatted as follows:
- Format MS Word, OpenOffice/LibreOffice or LaTeX
- Paper size: A4
- Margins: 2.5 cm left and 2.0 cm on all other sides
- Font style: Times New Roman
- Font size:12pt bold font for title and 10pt normal font is for authors'
name(s), affiliation(s),e-mail address and main text
- Line spacing: 1.5
Technical information about posters
The size of the poster will be 1189 x 841 mm (height x width, DIN A0).
The poster can be placed immediately after registration and can remain there till the end of the workshop.
Poster session 1
| nummer | autoren | titel |
|---|---|---|
| T1/1 | K. Bhanja, S. Gupta, S. Mohan Thermal hydraulic modeling of silicon crystal growth by Floatzone technique |
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| T1/2 | A.N. Buzynin, V.V. Osiko, Yu.N. Buzynin, O.I. Khrykin, B.N. Zvonkov Capillary epitaxy technique for growth of III-V films on fianite |
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| T1/3 | A.N. Buzynin Sectorial inhomogeneities of enforced growth form crystals and epitaxial films |
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| T1/4 | J.-C. Chen, Y.-Y. Teng, C.-W. Lu, C.-Y. Chen Numerical investigation of the oxygen impurity distribution during the multicrystalline silicon crystal growth under a gas flow guiding device |
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| T1/5 | Y. Collet, O. Magotte, N. Van den Bogaert, R. Rolinsky, F. Loix, M. Jacot, F. Dupret Effective Simulation of the Effect of a Transverse Magnetic Field (TMF) in Czochralski Silicon Growth |
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| T1/6 | S. Epure and T. Duffar Analysis of the practical stability of dewetted Bridgman growth of GaAs |
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| T1/7 | Ch. Frank-Rotsch, U. Juda, O. Root, B. Ubbenjans, P. Rudolph Growth results of 4 inch VGF-Germanium under traveling magnetic and ultrasonic fields |
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| T1/8 | D.B. Gadkari Advances of the vertical directional solidification technique for the growth of high quality GaSb bulk crystals |
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| T1/9 | V. Galindo, K. Niemietz, O. Pätzold, G. Gerbeth, M. Stelter Numerical and experimental modeling of VGF-type buoyant flow under the influence of traveling and rotating magnetic fields |
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| T1/11 | M.J. Deshpande, P. More, D. Maske, R. Choudhari, B. Arora, D. Gadkari Effect on the energy gap of dilute nitrogen doping in a growth of InSb bulk crystal |
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| T1/12 | G.N. Kozhemyakin Influence of solid-liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields |
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| T1/13 | X. Liu, L. Liu, Z. Li, Y. Wang Effects of Static Magnetic Fields on Thermal Fluctuations in the Melt of an Industrial CZ-Si Crystal Growth |
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| T1/14 | D.S. Maske, P.S. More, M.D. Deshpande, R. Choudhary and D.B. Gadkari Effect of Growth-rate on Quality of InSbBi Bulk Crystal Grown by Vertical Directional Solidification (VDS) |
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| T1/15 | H.-J. Rost, R. Menzel, A. Luedge, H. Riemann Float- Zone Silicon Crystal Growth at reduced RF frequencies |
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| T1/16 | A.M. Samoylov, S.V. Belenko, V.M. Ievlev, A.M. Khoviv, B.A. Siradze Real microstructure of pbte films deposited on si (100) and baf2 (100) Subsrates by modified hwe technique |
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| T1/17 | M. K. Sharov, A. M. Samoylov, V.M. Ievlev Thermal electromotive force and concentration of free Charge carriers in single crystals of lead telluride doped with Bromine |
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| T1/18 | T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, I. Yonenaga New Czochralski growth techniques of germanium crystals from the melt covered by B2O3 liquid |
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| T2/1 | Sh.O. Eminov, E.K. Huseynov, A.A. Rajabli, E.A. Mamedova Defects in SnSb and InSbBi epitaxial layers grown by Liquid phase epitaxy |
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| T2/2 | Y. Guo, J. Li, T. Yan, J. Wang, S. Han Investigation on crystal structure of Ga3PO7 from a K2Mo3O10 flux |
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| T2/3 | Y. Liu and C.T. Lin Growth of large Ba1-xKxFe2As2 (0≤x≤1) single crystals using Sn-melt sealing technique |
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| T2/4 | A.P. Revellez, B. Ménaert, B. Boulanger, F. Laurell, C.C. Valdas Bulk PPKTP by crystal growth from high temperature solution |
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| T2/5 | P.V. Seredin, A.V. Glotov, E.P. Domashevskaya, A.M. Samoylov, I.N. Arsentyev, L.S. Vavilova Growth and spinodal decomposition of GaxIn1-xAsyP1-y solid solutions |
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| T2/6 | A.M. Shah, I.B. Patel Studies of Growth Parameters and Characterization of Barium Tartrate(BaC4H4O6.2H2O) Crystal Grown by Solution Gel Techniques |
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| T2/7 | H. Susawa Variation around growth interface of calculated mole fractions in liquid phase epitaxy of alloy, considering forced-convection in liquid solution |
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| T2/8 | A.P. Voronov, V.I. Salo, G.N. Babenko, V.M. Puzikov, V.F. Tkachenko KDP Crystals for Neutron Detection: problems of obtaining and properties |
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| T4/1 | J. Crocco, H. Bensalah, Q. Zheng, I. Gallardo, E. Dieguez Challenges for improving the growth of bulk CZT crystals |
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| T4/3 | C. Logofatu, C.C. Negrila, R.V. Ghita, F. Ungureanu, C. Cotirlan, A.S. Manea, M.F. Lazarescu Evolution of surface oxides on GaAs |
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| T4/4 | V.I. Taranyuk, A.V. Gektin, A.V. Kolesnikov, I.I. Kisil Heat distribution for Skull technique growth and optimization of the process for halide crystal growth |
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| T4/5 | V.B. Vorontsov, D.V. Jhuravlev Analysis of acoustic emission signals accompanying growth of single aluminum crystals |
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| T7/1 | M. Bockowski, I. Grzegory, B. Lucznik and S. Porowski Recent results of High Nitrogen Pressure Solution growth of GaN by multi feed-seed configuration |
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| T7/2 | B. Gao and K. Kakimoto Numerical analysis of crystal growth of SiC and AlN by sublimation method |
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| T7/3 | K. Kachel, R. Zwierz, D. Gogova, D. Siche, and R. Fornari Revisiting the oldest method for GaN crystal growth: some new insights and achievements |
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| T7/4 | F. Mercier and S. Nishizawa Role of surface effects on SiC polytype stability |
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| T7/5 | V.I. Nikolaev, S.I. Bakholdin, V.M. Krymov, Y.G. Nosov, A.E. Romanov High Quality Basal Plane Self-Faceted Sapphire Ribbons for III-Nitride Applications |
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| T7/6 | J.-L. Santailler, R. Obrecht, A. Jonchère, F. Baudin, P. Marotel, S. Brochen, J. Merlin, D. Pelenc, C. Granier, G. Feuillet, F. Levy, A. Million Growth and properties of ZnO single crystal by vapour phase transport method |
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| T7/7 | R.R. Sumathi, R.U. Barz, T. Straubinger, P. Gille Structural and surface topography analysis of AlN single crystals grown on 6H-SiC substrates |
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| T7/8 | R. Togashi, T. Nagashima, M. Harada, Y. Kumagai, H. Yanagi and A. Koukitu Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates |
Poster session 2
| nummer | autoren | titel |
|---|---|---|
| T3/1 | F. Dughiero, M. Forzan, D. Ciscato, F. Giusto Active insulation system for highly effective thermal control in an induction heating directional solidification furnace for silicon ingot casting |
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| T3/2 | S. Dumitrica, D.Vizman, J.-P. Garandet Numerical studies on a type of mechanical stirring in directional solidification method of multicristalline silicon |
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| T3/4 | M.A. Gonik, O.S. Mazhorova Crystal growth of bulk silicon from a Si-Al melt |
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| T3/5 | F.-M. Kiessling, F. Büllesfeld, N. Dropka, Ch. Frank-Rotsch, M. Müller, P. Rudolph Characterisation of mc-Si directionally solidified in travelling magnetic fields |
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| T3/6 | L. Liu, Z. Li, X. Liu, Y. Zhang, J. Xiong Effects of argon flow on melt convection and interface shape at different growth stages in a directional solidification process for solar silicon ingot of industrial size |
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| T3/7 | A. Merah, F. Mokhtari, A. Bouabdallah, A. Alemany Numerical prediction of instabilities in Czochralski crystal growth with conical crucible |
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| T3/8 | F. Mokhtari, A. Bouabdallah, A. Merah, A. Alemany Symmetry breaking and pressure in cylindrical and spherical Czochralski crystal growth of silicon under different magnetic fields |
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| T3/9 | A. Muiznieks, K. Lacis, H. Riemann, A. Luedge, M. Wuenscher, M. Plate Unsteady 3D numerical modeling of 100 mm Floating Zone silicon single crystal growth process; Comparison with experiment |
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| T3/10 | K. Zaidat, M. Beaudhuin, A. Nouri, G. Hassan, C. Garnier, Y. Delannoy and T. Duffar Numerical and experimental study of the equiaxed "grit" grain structure of photovoltaic silicon ingots |
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| T3/11 | Z. Zhang, Z. Huang, Z. Liu, B. Li Factors cause quality difference of mc-Si ingot along solidification direction |
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| T5/1 | M.F. Acosta, R.I. Merino, V. M. Orera Crystal growth and microstructure of KCl-LiF directionally solidified eutectics |
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| T5/2 | P.-Y. Chena, E.-P. Huanga and C.-Y. Lo Three-dimensional simulation and anlaysis for heat transfer and flow field on micro-floating zone of LHPG with asymmetrical perturbation |
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| T5/3 | A. Laidoune, K. Lebbou, D. Bahloul, M. Smadi, M. Zereg Microstructure of the Al2O3-ZrO2 doped yttria eutectic fibers grown by the laser heated pedestal growth (LHPG) method |
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| T5/4 | M.C. Mesa, P.B. Oliete, A. Larrea Microstructural stability of Al2O3/Er3Al5O12 And Al2O3/Er3Al5O12/Zro2 Eutectic ceramics processed by the laser floating zone method |
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| T5/5 | P.B. Oliete, M.C. Mesa, R.I. Merino and V.M. Orera Processing, microstructure and optical properties of the directionally solidified Al2O3-EuAlO3 eutectic rods |
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| T5/6 | J. Pejchal, Y. Fujimoto, V. Chani, T. Yanagida, Y. Yokota, A. Yoshikawa, M. Nikl, A. Beitlerova Modifications of micro-pulling-down method for the growth of selected Li-containing crystals for neutron scintillator and VUV scintillation crystals |
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| T5/7 | S. Stolyarova, E. Baskin and Y. Nemirovsky Enhanced crystallization on porous silicon: modeling and experiments |
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| T6/1 | K. Conder, A. Krzton-Maziopa, E. Pomjakushina Single crystals of novel alkali metal intercalated iron chalcogenide superconductors |
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| T6/2 | I. Gerasymov, O. Sidletskiy, O. Voloshina, S. Neicheva, K. Katrunov, B. Grinyov Czochralski and flux growth of rare-earth disilicates for scintillation applications |
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| T6/3 | A.T.M.N. Islam, E.M. Wheeler, B. Lake, M. Reehuis, K. Siemensmeyer, M. Tovar, K. Kiefer Traveling-Solvent-Floating-Zone Growth of Large Spinel Single Crystal MgV2O4 |
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| T6/4 | L.I. Ivleva, V.V. Osiko, E.E. Dunaeva, V.S. Petrov, A.V. Nikolaevsky Features of beta-NaxV2O5 Czochralski single crystals growth |
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| T6/5 | A. Kokh, V. Vlezko, K. Kokh, N. Kononova, Ph. Villeval, D. Lupinski Dynamic control over the heat field during LBO crystal growth by Kyropoulos method |
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| T6/6 | V.M. Ievlev, M.P. Sumets, A.V. Kostyuchenko Substructure and electrical properties of LiNbO3 thin films |
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| T6/7 | N. Kozhaya, M. Ferriol, M. Cochez, M. Aillerie Single crystal growth using the μ-PD technique |
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| T6/8 | Robert Král Study on growth of ternary alkali lead halide crystals for IR lasers |
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| T6/9 | B. Kumar Growth, characterization and application of flux grown piezoelectric pzn-pt single crystals |
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| T6/10 | D.S. Pantsurkin, V.N. Shlegel, V.M. Mamedov, M.G. Vasiliev, V.S. Yuferev Growth of Bi12SiO20 and Bi12GeO20 bulk crystals by the Low-Temperature-Gradient Czochralski Technique |
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| T6/11 | J. Polák, K. Bartoš, J. Kubát, J. Houžvicka Growth and properties of undoped and rare earth doped lutetium aluminum garnet (LuAG) |
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| T6/12 | P. Rajesh and P. Ramasamy Optical, Mechanical, Dielectric, Piezoelectric, SHG and Laser Damage Threshold studies on ADP-KDP mixed crystals |
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| T6/13 | B. Riscob, N. Vijayan, M. Shkir, M.M. Abdullah, G. Bhagavannarayana and M.A. Wahab Effect of crucible shapes on crystalline perfection and other optical properties of VBT grown benzimidazole single crystals |
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| T6/14 | A. Sadovskiy, E. Sukhanova, I. Belogorokhov, G. Orlova, A. Voloshin, E. Zharikov, I. Avetissov Perfection of NaNOsub>3 single crystals grown by Axial Vibrational Control technique in Czochralski configuration |
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| T6/15 | I.A. dos Santos, D. Klimm, S.L. Baldochi, I.M. Ranieri Thermodynamics simulation and the phase diagram of the LiF-YF3 system |
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| T6/16 | K. Seki, A.S. Kozawa, T. Ujihara and Y. Takeda Polytype-Selective Growth of SiC by Supersaturation Control in Solution Growth |
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| T6/17 | M. Stef and I. Nicoara Influence of Na+ ions on the dielectric spectra of double doped (YbF3, NaF):CaF2 crystals |
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| T6/18 | S. Turczynski, K. Orlinski, D.A. Pawlak, R. Diduszko, R.I. Thomson, M.A. Carpenter Czochralski Growth of Praseodymium Lanthanium Aluminates solid solutions. Differential thermal analysis (DTA), X-ray diffraction and elastic and anelastic properties |
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| T6/19 | H. Wang, G.-Q. Hu, Z.-J. Zhang, H.-H. Chen, J.-T. Zhao Crystal Growth and Fluorine Doping Effects in PbWO4 Crystal |
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| T6/20 | J. Xu, H. Li, H. Tang, Y. Zou Study on the crystal growth technology of large-size sapphire single crystal |
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| T6/21 | Z. Cong Growth and Properties of Series Re:YCOB Crystals |
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| T6/22 | J. Zhong, C. Liu, H. Liang, Q. Su, J. Wang Crystal Growth and Scintillation Properties of MLuAlO4 :Ce3+ (M=Ca2+, Sr2+, Ba2+) |
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| T6/23 | Zs. Szaller, Á. Péter, K. Polgár, Gy. Szabo High temperature top seeded solution growth of stoichiometric lithium niobate with planar interface |
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| T6/24 | Daniela Parisi, Stefano Veronesi, Mauro Tonelli Growth and spectroscopic characterization of LiLuF4: Ho3+ |
