5th International Workshop on Crystal Growth Technology

June 26 - 30, 2011 Berlin, Germany

We wish to thank the following for their contribution to the success of this conference: European Office of Aerospace Research and Development, Air Force Office of Scientific Research, United States Air Force Research Laboratory (www.london.af.mil).

Call for Posters

All participants of the workshop are invited to present their recent research results concerning crystal growth technology as posters.

Please, upload for each poster you intend to present an extended 2-pages abstract as a Word file or archive file until February 20, 2011.
Based on the submitted abstracts the program committee will decide about acceptance and will send a notification to the author until March 18, 2011.

The authors of the best abstracts will receive an invitation to submit a 4-pages article to the Journal of Crystal Growth. It is planned to edit a special issue of Journal of Crystal Growth with these articles.

All abstracts will be printed in an abstract book and will be delivered at the registration for the workshop.

The 2-page abstract should formatted as follows:
- Format MS Word, OpenOffice/LibreOffice or LaTeX
- Paper size: A4
- Margins: 2.5 cm left and 2.0 cm on all other sides
- Font style: Times New Roman
- Font size:12pt bold font for title and 10pt normal font is for authors'
  name(s), affiliation(s),e-mail address and main text
- Line spacing: 1.5

Technical information about posters

The size of the poster will be 1189 x 841 mm (height x width, DIN A0).

The poster can be placed immediately after registration and can remain there till the end of the workshop.

Poster session 1

nummer autoren titel
T1/1 K. Bhanja, S. Gupta, S. Mohan
Thermal hydraulic modeling of silicon crystal growth by Floatzone technique
T1/2 A.N. Buzynin, V.V. Osiko, Yu.N. Buzynin, O.I. Khrykin, B.N. Zvonkov
Capillary epitaxy technique for growth of III-V films on fianite
T1/3 A.N. Buzynin
Sectorial inhomogeneities of enforced growth form crystals and epitaxial films
T1/4 J.-C. Chen, Y.-Y. Teng, C.-W. Lu, C.-Y. Chen
Numerical investigation of the oxygen impurity distribution during the multicrystalline silicon crystal growth under a gas flow guiding device
T1/5 Y. Collet, O. Magotte, N. Van den Bogaert, R. Rolinsky, F. Loix, M. Jacot, F. Dupret
Effective Simulation of the Effect of a Transverse Magnetic Field (TMF) in Czochralski Silicon Growth
T1/6 S. Epure and T. Duffar
Analysis of the practical stability of dewetted Bridgman growth of GaAs
T1/7 Ch. Frank-Rotsch, U. Juda, O. Root, B. Ubbenjans, P. Rudolph
Growth results of 4 inch VGF-Germanium under traveling magnetic and ultrasonic fields
T1/8 D.B. Gadkari
Advances of the vertical directional solidification technique for the growth of high quality GaSb bulk crystals
T1/9 V. Galindo, K. Niemietz, O. Pätzold, G. Gerbeth, M. Stelter
Numerical and experimental modeling of VGF-type buoyant flow under the influence of traveling and rotating magnetic fields
T1/11 M.J. Deshpande, P. More, D. Maske, R. Choudhari, B. Arora, D. Gadkari
Effect on the energy gap of dilute nitrogen doping in a growth of InSb bulk crystal
T1/12 G.N. Kozhemyakin
Influence of solid-liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields
T1/13 X. Liu, L. Liu, Z. Li, Y. Wang
Effects of Static Magnetic Fields on Thermal Fluctuations in the Melt of an Industrial CZ-Si Crystal Growth
T1/14 D.S. Maske, P.S. More, M.D. Deshpande, R. Choudhary and D.B. Gadkari
Effect of Growth-rate on Quality of InSbBi Bulk Crystal Grown by Vertical Directional Solidification (VDS)
T1/15 H.-J. Rost, R. Menzel, A. Luedge, H. Riemann
Float- Zone Silicon Crystal Growth at reduced RF frequencies
T1/16 A.M. Samoylov, S.V. Belenko, V.M. Ievlev, A.M. Khoviv, B.A. Siradze
Real microstructure of pbte films deposited on si (100) and baf2 (100) Subsrates by modified hwe technique
T1/17 M. K. Sharov, A. M. Samoylov, V.M. Ievlev
Thermal electromotive force and concentration of free Charge carriers in single crystals of lead telluride doped with Bromine
T1/18 T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, I. Yonenaga
New Czochralski growth techniques of germanium crystals from the melt covered by B2O3 liquid
T2/1 Sh.O. Eminov, E.K. Huseynov, A.A. Rajabli, E.A. Mamedova
Defects in SnSb and InSbBi epitaxial layers grown by Liquid phase epitaxy
T2/2 Y. Guo, J. Li, T. Yan, J. Wang, S. Han
Investigation on crystal structure of Ga3PO7 from a K2Mo3O10 flux
T2/3 Y. Liu and C.T. Lin
Growth of large Ba1-xKxFe2As2 (0≤x≤1) single crystals using Sn-melt sealing technique
T2/4 A.P. Revellez, B. Ménaert, B. Boulanger, F. Laurell, C.C. Valdas
Bulk PPKTP by crystal growth from high temperature solution
T2/5 P.V. Seredin, A.V. Glotov, E.P. Domashevskaya, A.M. Samoylov, I.N. Arsentyev, L.S. Vavilova
Growth and spinodal decomposition of GaxIn1-xAsyP1-y solid solutions
T2/6 A.M. Shah, I.B. Patel
Studies of Growth Parameters and Characterization of Barium Tartrate(BaC4H4O6.2H2O) Crystal Grown by Solution Gel Techniques
T2/7 H. Susawa
Variation around growth interface of calculated mole fractions in liquid phase epitaxy of alloy, considering forced-convection in liquid solution
T2/8 A.P. Voronov, V.I. Salo, G.N. Babenko, V.M. Puzikov, V.F. Tkachenko
KDP Crystals for Neutron Detection: problems of obtaining and properties
T4/1 J. Crocco, H. Bensalah, Q. Zheng, I. Gallardo, E. Dieguez
Challenges for improving the growth of bulk CZT crystals
T4/3 C. Logofatu, C.C. Negrila, R.V. Ghita, F. Ungureanu, C. Cotirlan, A.S. Manea, M.F. Lazarescu
Evolution of surface oxides on GaAs
T4/4 V.I. Taranyuk, A.V. Gektin, A.V. Kolesnikov, I.I. Kisil
Heat distribution for Skull technique growth and optimization of the process for halide crystal growth
T4/5 V.B. Vorontsov, D.V. Jhuravlev
Analysis of acoustic emission signals accompanying growth of single aluminum crystals
T7/1 M. Bockowski, I. Grzegory, B. Lucznik and S. Porowski
Recent results of High Nitrogen Pressure Solution growth of GaN by multi feed-seed configuration
T7/2 B. Gao and K. Kakimoto
Numerical analysis of crystal growth of SiC and AlN by sublimation method
T7/3 K. Kachel, R. Zwierz, D. Gogova, D. Siche, and R. Fornari
Revisiting the oldest method for GaN crystal growth: some new insights and achievements
T7/4 F. Mercier and S. Nishizawa
Role of surface effects on SiC polytype stability
T7/5 V.I. Nikolaev, S.I. Bakholdin, V.M. Krymov, Y.G. Nosov, A.E. Romanov
High Quality Basal Plane Self-Faceted Sapphire Ribbons for III-Nitride Applications
T7/6 J.-L. Santailler, R. Obrecht, A. Jonchère, F. Baudin, P. Marotel, S. Brochen, J. Merlin, D. Pelenc, C. Granier, G. Feuillet, F. Levy, A. Million
Growth and properties of ZnO single crystal by vapour phase transport method
T7/7 R.R. Sumathi, R.U. Barz, T. Straubinger, P. Gille
Structural and surface topography analysis of AlN single crystals grown on 6H-SiC substrates
T7/8 R. Togashi, T. Nagashima, M. Harada, Y. Kumagai, H. Yanagi and A. Koukitu
Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

Poster session 2

nummer autoren titel
T3/1 F. Dughiero, M. Forzan, D. Ciscato, F. Giusto
Active insulation system for highly effective thermal control in an induction heating directional solidification furnace for silicon ingot casting
T3/2 S. Dumitrica, D.Vizman, J.-P. Garandet
Numerical studies on a type of mechanical stirring in directional solidification method of multicristalline silicon
T3/4 M.A. Gonik, O.S. Mazhorova
Crystal growth of bulk silicon from a Si-Al melt
T3/5 F.-M. Kiessling, F. Büllesfeld, N. Dropka, Ch. Frank-Rotsch, M. Müller, P. Rudolph
Characterisation of mc-Si directionally solidified in travelling magnetic fields
T3/6 L. Liu, Z. Li, X. Liu, Y. Zhang, J. Xiong
Effects of argon flow on melt convection and interface shape at different growth stages in a directional solidification process for solar silicon ingot of industrial size
T3/7 A. Merah, F. Mokhtari, A. Bouabdallah, A. Alemany
Numerical prediction of instabilities in Czochralski crystal growth with conical crucible
T3/8 F. Mokhtari, A. Bouabdallah, A. Merah, A. Alemany
Symmetry breaking and pressure in cylindrical and spherical Czochralski crystal growth of silicon under different magnetic fields
T3/9 A. Muiznieks, K. Lacis, H. Riemann, A. Luedge, M. Wuenscher, M. Plate
Unsteady 3D numerical modeling of 100 mm Floating Zone silicon single crystal growth process; Comparison with experiment
T3/10 K. Zaidat, M. Beaudhuin, A. Nouri, G. Hassan, C. Garnier, Y. Delannoy and T. Duffar
Numerical and experimental study of the equiaxed "grit" grain structure of photovoltaic silicon ingots
T3/11 Z. Zhang, Z. Huang, Z. Liu, B. Li
Factors cause quality difference of mc-Si ingot along solidification direction
T5/1 M.F. Acosta, R.I. Merino, V. M. Orera
Crystal growth and microstructure of KCl-LiF directionally solidified eutectics
T5/2 P.-Y. Chena, E.-P. Huanga and C.-Y. Lo
Three-dimensional simulation and anlaysis for heat transfer and flow field on micro-floating zone of LHPG with asymmetrical perturbation
T5/3 A. Laidoune, K. Lebbou, D. Bahloul, M. Smadi, M. Zereg
Microstructure of the Al2O3-ZrO2 doped yttria eutectic fibers grown by the laser heated pedestal growth (LHPG) method
T5/4 M.C. Mesa, P.B. Oliete, A. Larrea
Microstructural stability of Al2O3/Er3Al5O12 And Al2O3/Er3Al5O12/Zro2 Eutectic ceramics processed by the laser floating zone method
T5/5 P.B. Oliete, M.C. Mesa, R.I. Merino and V.M. Orera
Processing, microstructure and optical properties of the directionally solidified Al2O3-EuAlO3 eutectic rods
T5/6 J. Pejchal, Y. Fujimoto, V. Chani, T. Yanagida, Y. Yokota, A. Yoshikawa, M. Nikl, A. Beitlerova
Modifications of micro-pulling-down method for the growth of selected Li-containing crystals for neutron scintillator and VUV scintillation crystals
T5/7 S. Stolyarova, E. Baskin and Y. Nemirovsky
Enhanced crystallization on porous silicon: modeling and experiments
T6/1 K. Conder, A. Krzton-Maziopa, E. Pomjakushina
Single crystals of novel alkali metal intercalated iron chalcogenide superconductors
T6/2 I. Gerasymov, O. Sidletskiy, O. Voloshina, S. Neicheva, K. Katrunov, B. Grinyov
Czochralski and flux growth of rare-earth disilicates for scintillation applications
T6/3 A.T.M.N. Islam, E.M. Wheeler, B. Lake, M. Reehuis, K. Siemensmeyer, M. Tovar, K. Kiefer
Traveling-Solvent-Floating-Zone Growth of Large Spinel Single Crystal MgV2O4
T6/4 L.I. Ivleva, V.V. Osiko, E.E. Dunaeva, V.S. Petrov, A.V. Nikolaevsky
Features of beta-NaxV2O5 Czochralski single crystals growth
T6/5 A. Kokh, V. Vlezko, K. Kokh, N. Kononova, Ph. Villeval, D. Lupinski
Dynamic control over the heat field during LBO crystal growth by Kyropoulos method
T6/6 V.M. Ievlev, M.P. Sumets, A.V. Kostyuchenko
Substructure and electrical properties of LiNbO3 thin films
T6/7 N. Kozhaya, M. Ferriol, M. Cochez, M. Aillerie
Single crystal growth using the μ-PD technique
T6/8 Robert Král
Study on growth of ternary alkali lead halide crystals for IR lasers
T6/9 B. Kumar
Growth, characterization and application of flux grown piezoelectric pzn-pt single crystals
T6/10 D.S. Pantsurkin, V.N. Shlegel, V.M. Mamedov, M.G. Vasiliev, V.S. Yuferev
Growth of Bi12SiO20 and Bi12GeO20 bulk crystals by the Low-Temperature-Gradient Czochralski Technique
T6/11 J. Polák, K. Bartoš, J. Kubát, J. Houžvicka
Growth and properties of undoped and rare earth doped lutetium aluminum garnet (LuAG)
T6/12 P. Rajesh and P. Ramasamy
Optical, Mechanical, Dielectric, Piezoelectric, SHG and Laser Damage Threshold studies on ADP-KDP mixed crystals
T6/13 B. Riscob, N. Vijayan, M. Shkir, M.M. Abdullah, G. Bhagavannarayana and M.A. Wahab
Effect of crucible shapes on crystalline perfection and other optical properties of VBT grown benzimidazole single crystals
T6/14 A. Sadovskiy, E. Sukhanova, I. Belogorokhov, G. Orlova, A. Voloshin, E. Zharikov, I. Avetissov
Perfection of NaNOsub>3 single crystals grown by Axial Vibrational Control technique in Czochralski configuration
T6/15 I.A. dos Santos, D. Klimm, S.L. Baldochi, I.M. Ranieri
Thermodynamics simulation and the phase diagram of the LiF-YF3 system
T6/16 K. Seki, A.S. Kozawa, T. Ujihara and Y. Takeda
Polytype-Selective Growth of SiC by Supersaturation Control in Solution Growth
T6/17 M. Stef and I. Nicoara
Influence of Na+ ions on the dielectric spectra of double doped (YbF3, NaF):CaF2 crystals
T6/18 S. Turczynski, K. Orlinski, D.A. Pawlak, R. Diduszko, R.I. Thomson, M.A. Carpenter
Czochralski Growth of Praseodymium Lanthanium Aluminates solid solutions. Differential thermal analysis (DTA), X-ray diffraction and elastic and anelastic properties
T6/19 H. Wang, G.-Q. Hu, Z.-J. Zhang, H.-H. Chen, J.-T. Zhao
Crystal Growth and Fluorine Doping Effects in PbWO4 Crystal
T6/20 J. Xu, H. Li, H. Tang, Y. Zou
Study on the crystal growth technology of large-size sapphire single crystal
T6/21 Z. Cong
Growth and Properties of Series Re:YCOB Crystals
T6/22 J. Zhong, C. Liu, H. Liang, Q. Su, J. Wang
Crystal Growth and Scintillation Properties of MLuAlO4 :Ce3+ (M=Ca2+, Sr2+, Ba2+)
T6/23 Zs. Szaller, Á. Péter, K. Polgár, Gy. Szabo
High temperature top seeded solution growth of stoichiometric lithium niobate with planar interface
T6/24 Daniela Parisi, Stefano Veronesi, Mauro Tonelli
Growth and spectroscopic characterization of LiLuF4: Ho3+